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10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD10NM60N

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-252(DPAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ​​​​​​​ •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STF10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI10NM60N

N-channel600V,0.53Ωtyp.,10AMDmesh™IIPowerMOSFETinI²PAKpackage

Features •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh™technology.ThisrevolutionaryPower MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STP10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NM60N

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP10NM60ND

N-channel600V,0.57,8A,DPAK,TO-220FP,TO-220FDmeshIIPowerMOSFET(withfastdiode)

Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NM60ND

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP10NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STU10NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU10NM60N

N-channel600V,0.53ohm,10A,DPAK,TO-220,TO-220FP,IPAKMDmeshIIPowerMOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh™technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST
TO-220F
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST/意法
21+
04
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
ST
23+
N/A
6000
原装,可配单
询价
STM进口原装
17+
TO-220
6200
100%原装正品现货
询价
ST
2022
TO220
30
原厂原装正品,价格超越代理
询价
STMicro.
23+
TO-220
7750
全新原装优势
询价
ST
1650+
?
7500
只做原装进口,假一罚十
询价
STMicroelectronics
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
ST
1735+
TO220
6528
科恒伟业!只做原装正品!假一赔十!
询价
ST
22+23+
TO-220
16410
绝对原装正品全新进口深圳现货
询价
更多STP10NM60FP供应商 更新时间2024-6-15 15:38:00