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STU10NM60N中文资料PDF规格书
STU10NM60N规格书详情
Description
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
产品属性
- 型号:
STU10NM60N
- 功能描述:
MOSFET N-channel 600 V Mdmesh 8A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
22 |
TO-251 |
25000 |
3月31原装,微信报价 |
询价 | ||
ST(意法) |
22+ |
BGA-100 |
6800 |
询价 | |||
ST/意法半导体 |
21+ |
TO-251-3 |
8800 |
公司只做原装正品 |
询价 | ||
STMicroelectronics |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST/意法半导体 |
22+ |
TO-251-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法 |
22+ |
TO-251 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
STMicroelectronics |
24+ |
TO-251(IPAK) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ST意法半导体 |
24+23+ |
TO220-2 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
ST/意法半导体 |
23+ |
TO-251-3 |
12700 |
买原装认准中赛美 |
询价 |