首页 >STD90N03L低压MOS管>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TrenchFET짰PowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
原装正品价格优惠 | ETC | |||
N-Channel30-V(D-S)MOSFETTrenchFETPowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETL E-Tech Electronics LTD | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
100AvalancheTested | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI/台湾微碧 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VBSEMI/台湾微碧 |
22+ |
TO-252 |
50000 |
只做原装假一罚十,欢迎咨询 |
询价 | ||
ST |
22+ |
TO-252 |
18858 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
ST |
TO-252 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
07+/08+ |
TO-252 |
7500 |
询价 | |||
ST |
1415+ |
TO-251 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原装优势 |
询价 | ||
ST |
16+ |
TO-252(2引线+接 |
1 |
原装现货假一罚十 |
询价 | ||
ST |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
85400 |
正品授权货源可靠 |
询价 |
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