首页 >STD90N03LMOS>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
TrenchFET짰PowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
原装正品价格优惠 | ETC | |||
N-Channel30-V(D-S)MOSFETTrenchFETPowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
100AvalancheTested | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST意法半导体 |
22+21+ |
TO-252 |
2300 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
ST/意法 |
23+ |
TO-252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST/意法 |
21+ |
TO-252 |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
ST/意法 |
22+ |
SOT-252 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ST/意法 |
0845+ |
TO-252-2 |
100 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST/意法 |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ST |
17+ |
TO-252 |
6200 |
询价 | |||
23+ |
N/A |
85500 |
正品授权货源可靠 |
询价 |
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