SR10050-TBM-E资料使用说明书行情报价ADPOW-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
10050	文件：769.53 Kbytes Page：3 Pages	InductiveSensor Features ■Ø6.5mm,smoothbarrel ■Stainlesssteel,1.4404 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,Exzone0 ■ATEXcategoryII1D,Exzone20 ■SIL2(LowDemandMode)acc.toIEC61508, PLcacc.toISO13849-1withHFT0	TURCKTURCK 上海乐利上海乐利自动化科技有限公司	TURCK
10050	文件：126.42 Kbytes Page：1 Pages	NylonPCBSupports-ImperialSpacing	Heyco Heyco	Heyco
10050BQ	文件：143.45 Kbytes Page：2 Pages	5.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司	ZSELEC
10050-C	文件：184.9 Kbytes Page：7 Pages	10050ExtremeCompatibleTransceiverSFP10/100/1000Base-T(RJ45,Copper,100m) Features ATGBICS10050SFPoperatesonstandardCategory5unshieldedtwisted-paircoppercablingoflinklengthsupto100m. Extreme1000BASE-TSFPmodulessupport10/100/1000autonegotiationandautoMDI/MDIX. OurproductmeetsthespecificationofExtreme10050=andweproudlyofferacompa	ATGBICS ATGBICS by Approved Technology	ATGBICS
10050LVR	文件：60.86 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT10050JLC	文件：39.52 Kbytes Page：2 Pages	PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT10050JN	文件：60.09 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT10050JVFR	文件：70.95 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody	ADPOW Advanced Power Technology	ADPOW
APT10050JVFR	文件：68.41 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.	ADPOW Advanced Power Technology	ADPOW
APT10050JVR	文件：67.95 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT10050LLC	文件：68.49 Kbytes Page：2 Pages	PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT10050LVFR	文件：108.31 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific	ADPOW Advanced Power Technology	ADPOW
APT10050LVFR	文件：67.62 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.	ADPOW Advanced Power Technology	ADPOW
APT10050LVFR	文件：327.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT10050LVR	文件：60.86 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
DEM10050C	文件：107.75 Kbytes Page：1 Pages	10.3x10.3mmMax.square,5.0mmMax.height.	Toko Toko Inc.	Toko
DVCR10050-LF	文件：271.86 Kbytes Page：3 Pages	ELECTROLYTIC-85째C	DUBILIERDUBILIER DUBILIER	DUBILIER
DVJL10050-LF	文件：262.3 Kbytes Page：2 Pages	SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL	DUBILIERDUBILIER DUBILIER	DUBILIER
DVJL10050-LF	文件：262.3 Kbytes Page：2 Pages	SMD-105째CLOWIMPEDANCE	DUBILIERDUBILIER DUBILIER	DUBILIER
DVJR10050-LF	文件：276.68 Kbytes Page：2 Pages	ELECTROLYTIC105째CREDUCEDSIZE	DUBILIERDUBILIER DUBILIER	DUBILIER

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供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	SR10050-TBM-E	SANYO	23+	BGA	60000	原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	SR10050-TBM-E		23+	N/A	45990	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	SR10050-TBM-E	SANYO/三洋	1801+	QFN	5960	原装正品-现货-绝对有货-实单价可谈	询价
瀚佳科技(深圳)有限公司	SR10050-TBM-E	只做原装	21+	BGA	36520	一级代理/放心采购	询价
深圳市艾宇特电子科技有限公司	SR10050-TBM-E	SANYO/三洋	2048+	QFN	9851	只做原装正品现货!或订货假一赔十!	询价
艾睿国际（香港）有限公司	SR10050-TBM-E	SANYO/三洋	2021+	QFN	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市航润创能电子集团有限公司	SR10050-TBM-E	SANYO	21+	QFN	36000	原装现货假一赔十	询价
深圳市振芯物联科技有限公司	SR10050-TBM-E	SANYO	22+	QFN	28600	只做原装正品现货假一赔十一级代理	询价
深圳市威尔健半导体有限公司	SR10050-TBM-E	SANYO/三洋	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SR10050-TBM-E	SANYO/三洋	21+	BGA	10000	原装现货假一罚十	询价

更多SR10050-TBM-E供应商更新时间2024-4-30 15:36:00

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