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APT10050JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

APT10050JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

APT10050JVFR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

10050

InductiveSensor

Features ■Ø6.5mm,smoothbarrel ■Stainlesssteel,1.4404 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,Exzone0 ■ATEXcategoryII1D,Exzone20 ■SIL2(LowDemandMode)acc.toIEC61508, PLcacc.toISO13849-1withHFT0

TURCKTURCK

上海乐利上海乐利自动化科技有限公司

10050

NylonPCBSupports-ImperialSpacing

Heyco

Heyco

10050BQ

5.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

10050-C

10050ExtremeCompatibleTransceiverSFP10/100/1000Base-T(RJ45,Copper,100m)

Features ATGBICS10050SFPoperatesonstandardCategory5unshieldedtwisted-paircoppercablingoflinklengthsupto100m. Extreme1000BASE-TSFPmodulessupport10/100/1000autonegotiationandautoMDI/MDIX. OurproductmeetsthespecificationofExtreme10050=andweproudlyofferacompa

ATGBICS

ATGBICS by Approved Technology

10050LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10050JLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10050JN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT10050JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10050LLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10050LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific

ADPOW

Advanced Power Technology

APT10050LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT10050LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT10050LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

DEM10050C

10.3x10.3mmMax.square,5.0mmMax.height.

Toko

Toko Inc.

DVCR10050-LF

ELECTROLYTIC-85째C

DUBILIERDUBILIER

DUBILIER

DVJL10050-LF

SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL

DUBILIERDUBILIER

DUBILIER

DVJL10050-LF

SMD-105째CLOWIMPEDANCE

DUBILIERDUBILIER

DUBILIER

详细参数

  • 型号:

    APT10050JVFR

  • 功能描述:

    MOSFET N-CH 1000V 19A SOT-227

  • RoHS:

  • 类别:

    半导体模块 >> FET

  • 系列:

    POWER MOS V®

  • 标准包装:

    10

  • 系列:

    *

供应商型号品牌批号封装库存备注价格
APT
23+
模块
360
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
APT
23+
模块
3562
询价
APT
99+/00+
36
询价
APT
23+
模块
5000
原装正品,假一罚十
询价
APT
22+
模块
3500
原装现货,可开13%税票
询价
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
场效应
1950+
980
只做原装正品现货!或订货假一赔十!
询价
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
询价
APT
2018+
module
6000
全新原装正品现货,假一赔佰
询价
APT
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多APT10050JVFR供应商 更新时间2024-5-17 16:30:00