首页 >SPW50R140P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS(on)inTO220 •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Hard& | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
500VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | ||
500VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
INFINEON |
23+ |
TO-247 |
8000 |
只做原装现货 |
询价 | ||
INFINEO |
23+ |
TO-247 |
8000 |
原装正品 |
询价 | ||
INFINEON |
23+ |
TO247 |
8820 |
全新原装优势 |
询价 | ||
INF |
23+ |
540 |
原装现货,欢迎咨询 |
询价 | |||
INF |
23+ |
TO-247 |
5000 |
原装正品,假一罚十 |
询价 | ||
INFINEON |
23+ |
TO-247 |
7936 |
询价 | |||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINEO |
17+ |
TO-247 |
9888 |
只做原装,现货库存 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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