首页 >SLP50R140SJ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SLP50R140SJ | 500V N-Channel MOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI | |
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS(on)inTO220 •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC0) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Hard& | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features •WorldwidebestRDS,oninTO220 •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard&am | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.14Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半导体有限公司 | MAPLESMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAPLESEMI/美浦森 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
MINI |
2018+ |
6528 |
科恒伟业!承若只做进口原装正品假一赔十!1581728776 |
询价 | |||
- |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
MINI |
2308+ |
NA |
6859 |
十年专业专注 优势渠道商正品保证公司现货 |
询价 | ||
SANYO |
21180 |
询价 | |||||
MINI |
2018+ |
SMD |
1680 |
MINI专营品牌进口原装现货假一赔十 |
询价 | ||
Mini-circuits |
18+ |
原厂原装 |
6000 |
专注Mini射频微波全系列,只做原装正品,现货库存 |
询价 | ||
Mini-Circuits |
638 |
原装正品 |
询价 | ||||
MINI |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
MINI |
20+ |
100 |
MINI一级代理分销! |
询价 |
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