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SGU15N40

General Description

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplicati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGU15N40L

General Description

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplicati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGU15N40LTU

包装:管件 封装/外壳:TO-251-3 短引线,IPak,TO-251AA 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 400V 45W IPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

15N40

15A,400VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC15N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

15N40K-MT

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

DAM15N40S

N-ChannelEnhancementModeMOSFET

DACO

DACO

FDP15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP15N40

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FGR15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40LTF

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGC15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    SGU15N40

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    General Description

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHIL
08+(pbfree)
TO-251
8866
询价
FAIRC
12+
15000
全新原装,绝对正品,公司现货供应。
询价
FCS
22+
TO-251
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
FSC/ON
23+
原包装原封 □□
11085
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD
21+
TO-251
30490
原装现货库存
询价
Fairchild/ON
22+
IPak
9000
原厂渠道,现货配单
询价
ON Semiconductor
2022+
I-PAK
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
FAIRCHILD
2023+
TO-251
4835
全新原厂原装产品、公司现货销售
询价
ON-安森美
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多SGU15N40供应商 更新时间2024-6-12 10:21:00