首页 >SGU20N40LTU>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SGU20N40LTU | 包装:管件 封装/外壳:TO-251-3 短引线,IPak,TO-251AA 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 400V 45W IPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
400V,23AN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | |||
20A竊?00VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | |||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
400V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | |||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
400VN-ChannelMOSFET Features •19.5A,400V,RDS(on)=0.22Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical45pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | |||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •CommonAnodeConfiguration •LeadFreeByDesign/RoHSCompliant(Note3) •GreenDevice(Note4) | DIODESDiodes Incorporated 达尔科技 | |||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODESDiodes Incorporated 达尔科技 | |||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GeneralDescription GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
产品属性
- 产品编号:
SGU20N40LTU
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- IGBT 类型:
沟道
- 不同 Vge、Ic 时 Vce(on)(最大值):
8V @ 4.5V,150A
- 输入类型:
标准
- 工作温度:
-40°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-251-3 短引线,IPak,TO-251AA
- 供应商器件封装:
I-PAK
- 描述:
IGBT 400V 45W IPAK
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAI |
2017+ |
TO251 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
FAI |
2018+ |
TO251 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
FSC/ON |
23+ |
原包装原封 □□ |
69703 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
询价 | ||
Fairchild仙童 |
23+ |
IPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRCHILD仙童 |
23+ |
IPAK |
10000 |
公司只做原装正品 |
询价 | ||
Fairchild/ON |
22+ |
IPak |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON Semiconductor |
2022+ |
I-PAK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Fairchild仙童 |
22+ |
IPAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
Fairchild仙童 |
22+ |
IPAK |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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