零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SGD02N120 | Fast S-IGBT in NPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
SGD02N120 | Fast IGBT in NPT-technology DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SGD02N120 | Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 1200V 6.2A 62W TO252-3 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologyLowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastS-IGBTinNPT-technology FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBT DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·Motorcontrols ·Inverter ·SMPS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforfrequencyinvertersforwashingmachi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistributi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号:
SGD02N120
- 功能描述:
IGBT 晶体管 FAST IGBT NPT TECH 1200V 2A
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集电极—发射极最大电压
- VCEO:
650 V
- 集电极—射极饱和电压:
2.3 V
- 栅极/发射极最大电压:
20 V 在25
- C的连续集电极电流:
150 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
187 W
- 封装/箱体:
TO-247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SOT-252 |
17418 |
原装进口假一罚十 |
询价 | ||
INENOI |
20+ |
SOT252 |
2947 |
全新原装,价格优势 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO252 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ON |
22+ |
TO-252 |
500 |
原装优质现货订货渠道商 |
询价 | ||
INFINEON/英飞凌 |
TO252 |
7906200 |
询价 | ||||
英飞凌 |
新批次 |
N/A |
1500 |
询价 | |||
INFINEON |
TO-252 |
32 |
询价 | ||||
INFINEON |
1408+ |
TO-252 |
9500 |
绝对原装进口现货可开增值税发票 |
询价 |
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