| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3phiRoundWideViewingAngleLEDs 3φRoundWideViewingAngleLEDs | SankenSanken Electric Co Ltd. 三垦日本三垦 | Sanken | ||
ShieldedPowerInductor??SER2000 | COILCRAFTCoilcraft 线艺 | COILCRAFT | ||
HighEnergyNPNTransistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI SSDI | SSDI | ||
200AMP100-140VOLTSNPNTRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | SSDI | ||
HIGHENERCYNPNTRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LowPower,LowDropout,250mA,RF-LinearRegulators GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30µVRMSTYP(10Hzto100kHz) -Ul | SGMICROSG Micro Corp 圣邦圣邦微电子（北京）股份有限公司 | SGMICRO | ||
GaAsN-channelDualGateMESFET? Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1. | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1. | SonySONY 索尼 | Sony | ||
GaAsN-channelDualGateMESFET? Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz • | SonySONY 索尼 | Sony | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SKYWORKS/思佳讯 |
22+ |
15500 |
只做原装正品假一赔十!正规渠道订货! |
询价 | |||
SKYWORKS |
20+ |
36200 |
原装现货/放心购买 |
询价 | |||
ANY |
新 |
2 |
全新原装 货期两周 |
询价 | |||
3000 |
自己现货 |
询价 | |||||
DENSO |
2023+ |
ZIP |
4865 |
全新原厂原装产品、公司现货销售 |
询价 | ||
原厂 |
2024+ |
SOP |
50000 |
原装现货 |
询价 | ||
DENSO |
SIP12 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
B&B |
22+ |
NA |
67 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
SINO-IC(光宇睿芯) |
2112+ |
DFN-8 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 |
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