FZT851

NPNSiliconPlanarHighCurrent(HighPerformance)Transistor

■Features ●CollectorCurrentCapabilityIC=6A ●CollectorEmitterVoltageVCEO=60V ●ComplementarytoFZT951

FZT851

SOT223NPNSILICONPLANARHIGHCURRENT

Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FZT851

NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTORS

FEATURES *Extremelylowequivalenton-resistance;RCE(sat)44mΩat5A *6Ampscontinuouscurrent,upto20Ampspeakcurrent *Verylowsaturationvoltages *ExcellenthFEcharacteristicsspecifiedupto10Amps

FZT851

60VNPNMEDIUMPOWERTRANSISTOR

FZT851QTA

60VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FZT851QTA

60VNPNMEDIUMPOWERTRANSISTOR

FZT851TA

60VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FZT851TA

60VNPNMEDIUMPOWERTRANSISTOR

GI851

FASTSWITCHINGPLASTICRECTIFIER

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Highsurgecurrentcapability ♦Fastswitchingforhighefficiency ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Highforwardcurrentoperation ♦Hightemperaturesolderingguaranteed:2

GI851

FastSwitchingPlasticRectifier

FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin   accordancetoWEEE2002/96/EC TYPICALAPPLICATIONS   Forusei

GI851

FastSwitchingPlasticRectifier

FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS

INA851

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains

INA851

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithOptionalAttenuatingGain

INA851

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

INA851

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster

INA851

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

INA851RGTR

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

INA851RGTT

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise

IT851

EmbeddedController

1.Features 8032EmbeddedController −TwinTurboversion −1instructionat1machinecycle −Maximum10MHzforECdomainand8032 −Instructionsetcompatiblewithstandard8051 LPCBusInterface −CompatiblewiththeLPCspecificationv1.1 −SupportsI/Oread/write −SupportsMemory

JE851H

SUBMINIATUREINTERMEDIATEPOWERRELAY