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EMB16N06A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID6.7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06H

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FTP16N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

未分类制造商

NP16N06QLK

DualN-channelPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP16N06YLL

60V??16A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

PJD16N06A

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJD16N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

RFD16N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LE

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06SM

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2122+
TO-252
50000
全新原装正品,优势渠道,假一赔十
询价
N/A
5400
询价
infineon
23+
原厂原装
3000
全新原装
询价
INTERSIL/FSC
23+
TO-252
28610
询价
INTERSIL
2017+
TO-252
25899
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
INTERSIL
360000
原厂原装
1305
询价
INTERSIL/HARRIS
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
INTERSIL/HARRIS
21+
35200
一级代理/放心采购
询价
INTERSIL/HARRIS
08+
5000
普通
询价
FAIRCHILD
20+/21+
TO-252
50000
全新原装价格优惠
询价
更多RFD16N06LSM存储IC供应商 更新时间2024-5-21 8:56:00