RFD11N06RLESM资料datasheet下载库存现货-114ic电子网

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11N06	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06LT	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06T	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PJD11N06A	文件：908.72 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
PJD11N06A-AU	文件：820.13 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳好佳好科技有限公司	RFD11N06RLESM	FAIRCHILD	360000	原厂原装	1305		询价
深圳市勤思达科技有限公司	RFD11N06RLESM	FAIRCHIL	1415+	TO-252	28500	全新原装正品,优势热卖	询价
深圳市博浩通科技有限公司	RFD11N06RLESM	FAIRCHILD	23+	TO-252	36000	专业优势供应	询价
深圳市百视威讯电子科技有限公司	RFD11N06RLESM		23+	N/A	35900	正品授权货源可靠	询价
深圳市威尔健半导体有限公司	RFD11N06RLESM	IR	23+	I-PAK	69820	终端可以免费供样,支持BOM配单!	询价
深圳市鼎欣微电子有限公司	RFD11N06RLESM	FAIRCHILD/仙童	21+	TO-252	30000	只做正品原装现货	询价
深圳市国宇半导体科技有限公司	RFD11N06RLESM	S	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	RFD11N06RLESM	S	22+	TO-252	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	RFD11N06RLESM	S	23+	TO-252	6000	原装正品，支持实单	询价
深圳市金芯世纪电子有限公司	RFD11N06RLESM	FAIRCHILD/仙童	22+	TO-252	100000	代理渠道/只做原装/可含税	询价

更多RFD11N06RLESM供应商更新时间2024-4-30 16:36:00

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