| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconHigh?뭋oltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconHigh-VoltagePowerTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSiliconHigh-VoltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconHigh?뭋oltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Lithium-IonBatteryChargeControlIC | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | MITSUMI | ||
SOT-363Plastic-EncapsulateMOSFETs FEATURE SurfaceMountPackage LowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate IncludingaN-chCJ3134KandaP-chCJ3139K independently)InaPackage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
60VP-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
60VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-10V,ID@-500mA | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
NPNhigh-voltagetransistors DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.350V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | MITSUMI | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | MITSUMI | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中積體電路大中積體電路股份有限公司 | SINOPWER | ||
N&P-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N&P-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
详细参数
- 型号：
QX3439
- 制造商：
Bulgin/Elektron Components Ltd
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NQUNXIN |
2341 |
SOP-6 |
20000 |
原装正品价格优惠,志同道合共谋发展 |
询价 | ||
NQUNXIN |
2350 |
SOP-6 |
120 |
现货库存,实单请给接受价格 |
询价 | ||
Bulgin Components- PLC |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
5000 |
公司存货 |
询价 | |||||
群芯微 |
19+ |
SOP4 |
2750 |
只做原装 |
询价 | ||
群芯微 |
21+ |
SOP4 |
55 |
全新原装鄙视假货15118075546 |
询价 | ||
Bulgin |
000 |
RoHSCompliant |
6 |
原厂封装 |
询价 | ||
Bulgin |
22+ |
NA |
1705 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
MIT |
23+ |
模块 |
500 |
全新原装 |
询价 | ||
QXMD |
2016+ |
SOT23-5 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
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