首页 >PHD45N03LT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-channel enhancement mode field-effect transistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET GeneralDescription ThisdeviceemploysanewadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,45A) Features •RDS(on)=15mΩ@VGS=10V,ID=25A •RDS(on)=20mΩ@VGS=4.5V,ID=25A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo | HSMC 华昕 | HSMC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP45N03LTAinSOT78(TO-220AB) PHB45N03LTAinSOT404(D2-PAK) PHD45N03LTAinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswit | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticsuitableforsurfacemountingenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP45N03LTissuppl | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips |
详细参数
- 型号：
PHD45N03LT
- 制造商：
PHILIPS
- 制造商全称：
NXP Semiconductors
- 功能描述：
N-channel enhancement mode field-effect transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
2105+ |
TO-252 |
10053 |
询价 | |||
PHILIPS/飞利浦 |
2024+实力库存 |
TO-252 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
NXP/恩智浦 |
TO252 |
7906200 |
询价 | ||||
PHILIPS |
09+ |
TO252 |
5500 |
原装无铅,优势热卖 |
询价 | ||
PHILIPS |
0740+ |
TO252 |
3000 |
现货-ROHO |
询价 | ||
PHILIPS |
22+ |
SOT-263 |
4897 |
绝对原装!现货热卖! |
询价 | ||
NXP |
2339+ |
TO-252 |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
PHILIPS |
2020+ |
SOT428 |
64 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
NXP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
TO-252 |
8100 |
新进库存/原装 |
询价 |
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- PHE426KB6100JR06
- PHE426KB6470JR06
- PHE426KD6390JR06L2
- PHE426KD6680JR06L2
- PHE426KD7150JR06L2
- PHE426KF7220JR06L2
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- PHE426HA6220JR05
- PHE426HA6220JR30
- PHE426HB6330JR06
- PHE426HB6680JR06
- PHE426HD7100JR06L2
- PHE426HD7470JR06L2
- PHE426HF7330JR06L2
- PHE426HF7820JR06L2
- PHE426HJ4470JR05
- PHE426HJ5220JR17T0
- PHE426HJ5330JR17TA
- PHE426HJ6100FR05
- PHE426HK4470JR05
- PHE426HR8100JR06L2
- PHE426JB6220JR06
- PHE426JD6470JR06L2
- PHE426JD7270JR30L2
- PHE426JF7220JR06L2
- PHE426KA5220JR05
- PHE426KA5330JR05
- PHE426KA5560JR05
- PHE426KB6220JR06
- PHE426KD6330JR06L2
- PHE426KD6470JR06L2
- PHE426KD6820JR06L2
- PHE426KF7150JR06L2
- PHE426KJ5100JR05
