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NTB30N20

Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB30N20

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB30N20G

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB30N20T4

Power MOSFET 30 Amps, 200 Volts N?묬hannel Enhancement?묺ode D2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB30N20T4

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTB30N20T4G

Power MOSFET 30 Amps, 200 Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

30N20

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

30N20

30A,200VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N20isanN-channelmodePowerFET,itusesUTC’sadvancedtechnology.Thistechnologyallowsaminimumon-stateresistance,superiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. FEATURES *RDS(ON)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

30N20G

PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220

Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters

ONSEMION Semiconductor

安森美半导体安森美半导体公司

A30N20MP

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A30N20MPP

PanelsandPanelAccessories

PENTAIRPentair plc. All rights reserved.

滨特尔滨特尔集团

A30N20MPP

PERFORATEDPANELS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

DAM30N20D

N-ChannelEnhancementModeMOSFET

DACO

DACO

DAME30N20H

N-ChannelEnhancementModeMOSFET

DACO

DACO

FTW30N20A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MSAER30N20A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFR30N20A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTE30N20FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTH30N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTP30N20

PowerMOSFET30Amps,200VoltsN-ChannelEnhancementïModeTO-220

Features •SourceïtoïDrainDiodeRecoveryTimeComparabletoaDiscrete FastRecoveryDiode •AvalancheEnergySpecified •IDSSandRDS(on)SpecifiedatElevatedTemperature •PbïFreePackageisAvailable Applications •PWMMotorControls •PowerSupplies •Converters

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    NTB30N20

  • 功能描述:

    MOSFET 200V 30A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON
23+
TO-263
37650
全新原装真实库存含13点增值税票!
询价
ON
23+
TO-263
35890
询价
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
MOT
6000
面议
19
DIP/SMD
询价
ON
1746+
TO263
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
ON
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
ON
20+
TO-263
90000
全新原装正品/库存充足
询价
ON/安森美
23+
SOT-263
24190
原装正品代理渠道价格优势
询价
ON
1709+
SOT-263
32500
普通
询价
更多NTB30N20供应商 更新时间2024-6-14 16:54:00