NP22N055HLE规格书供应价格瑞萨RENESAS-114ic电子网

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NP22N055HLE	文件：297.3 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055HLE	文件：316.43 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055HLE	文件：961.02 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
NP22N055HLE_15	文件：297.89 Kbytes Page：9 Pages	SWITCHING N-CHANNEL POWER MOSFET	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
22N055	文件：960.33 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
NP22N055HHE	文件：84.08 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowCiss:Ciss=590pFTYP. •Built-in	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP22N055HHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055HHE	文件：316.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055HHE	文件：960.11 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
NP22N055IHE	文件：298.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055IHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055IHE	文件：84.08 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowCiss:Ciss=590pFTYP. •Built-in	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NP22N055ILE	文件：297.3 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055ILE	文件：298.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055SHE	文件：298.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP22N055SHE	文件：295.45 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) •LowC	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SLE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SLE	文件：297.3 Kbytes Page：9 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP22N055SLE	文件：298.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
NP22N055HLE
制造商：
Renesas Electronics Corporation

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	NP22N055HLE	NEC	17+	TO-251	31518	原装正品可含税交易	询价
深圳市一线半导体有限公司	NP22N055HLE	NEC	08+(pbfree)	TO-251	8866		询价
深圳市博浩通科技有限公司	NP22N055HLE	NEC	23+	TO-251	12270	全新原装	询价
深圳市近平电子有限公司	NP22N055HLE	NEC	6000	面议	19	TO-251	询价
深圳市宏捷佳电子科技有限公司	NP22N055HLE	R	23+	TO-251	76000	全新原装真实库存含13点增值税票!	询价
深圳市纳艾斯科技有限公司	NP22N055HLE	R	2020+	TO-251	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳兆威电子有限公司	NP22N055HLE	NEC	23+	TO-251	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市振芯物联科技有限公司	NP22N055HLE	VBsemi/台湾微碧	22+	TO-251	28600	只做原装正品现货假一赔十一级代理	询价
深圳市威尔健半导体有限公司	NP22N055HLE	VBSEMI/台湾微碧	23+	TO-251	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	NP22N055HLE	RENESAS	21+	TO251	50000	全新原装正品现货,支持订货	询价

更多NP22N055HLE供应商更新时间2024-6-10 10:03:00

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