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NESG3031M05-T1-A中文资料PDF规格书
NESG3031M05-T1-A规格书详情
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
产品属性
- 型号:
NESG3031M05-T1-A
- 功能描述:
射频硅锗晶体管 NPN SiGe High Freq
- RoHS:
否
- 制造商:
Infineon Technologies 发射极 - 基极电压
- 封装:
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS |
2023+ |
SOT343 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NEC |
SOT343 |
1000 |
原装现货支持BOM配单服务 |
询价 | |||
RENESAS/瑞萨 |
23+ |
SOT343 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
RENESAS/原装 |
SC70-4 |
79363 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
CEL |
SOT343 |
7906200 |
询价 | ||||
NEC |
22+ |
SOT-343 |
3000 |
原装正品,支持实单 |
询价 | ||
RENESAS/瑞萨 |
2019+全新原装正品 |
SOT343 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT343 |
35806 |
水星电子只做原装,支持一站式BOM配单。 |
询价 | ||
Renesas(瑞萨) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 |