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NESG220033中文资料PDF规格书

厂商型号	NESG220033
功能描述	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
文件大小	224.53 Kbytes
页面数量	10 页
生产厂商	Renesas Electronics America
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2024-6-8 9:00:00

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

FEATURES

• The device is an ideal choice for low noise, low distortion amplification.

NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz

• PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

• Maximum stable power gain: MSG =14.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz

• SiGe HBT technology (UHS2) : fT = 12.5 GHz

• This product is improvement of ESD of NESG2xxx series.

• 3-pin minimold (33 PKG)

型号：
NESG220033
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD(33 PKG)