DESCRIPTION

NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications.

NECs stringent quality assurance and test procedures ensure the highest reliability and performance.

FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE (SOT-343)

• LOW NOISE FIGURE: 0.6 dB typical at 2 GHz

• HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz

• LG = 0.6 µm, WG = 400 µm

• TAPE & REEL PACKAGING

NE34018-A属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。California Eastern Laboratories制造生产的NE34018-A晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。