| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MTB36N06V | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MTB36N06V | TMOS POWER FET 32 AMPERES 60 VOLTS TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
MTB36N06V | N?묬hannel Power MOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
N?묬hannel Power MOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET36AMPERES60VOLTS TMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=40mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM TMOSPOWERFET32AMPERES60VOLTSRDS(on)=0.04OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountapplications. Thedeviceisintendedforuseinautomotiveandgeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. Thedeviceisintendedforuseinautomotiveapplications,SwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
NChannelEnhancementModeMOSFET | STANSONStanson Technology Stanson 科技 | STANSON | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.03Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
详细参数
- 型号：
MTB36N06V
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2024+实力库存 |
3350 |
只做原厂渠道 可追溯货源 |
询价 | |||
ON |
360000 |
原厂原装 |
1305 |
询价 | |||
ON |
08PB |
30000 |
询价 | ||||
ON |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
ON |
23+ |
TO-263 |
6893 |
询价 | |||
ON |
2017+ |
TO263 |
44558 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
ON |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
MOT |
23+ |
NA |
1832 |
专做原装正品,假一罚百! |
询价 | ||
ON |
23+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
23+ |
N/A |
85400 |
正品授权货源可靠 |
询价 |
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