MTB36N06V中文资料PDF规格书
MTB36N06V规格书详情
TMOS V™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号:
MTB36N06V
- 制造商:
ON Semiconductor
- 功能描述:
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-263 |
6893 |
询价 | |||
ON/安森美 |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON/安森美 |
TO-263 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ON |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
询价 | ||
ON/安森美 |
2024+实力库存 |
3350 |
只做原厂渠道 可追溯货源 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ON |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
ON |
08PB |
30000 |
询价 | ||||
ON |
23+ |
TO-263 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
ON/安森美 |
2022+ |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 |