SWITCHMODE

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

Features

• Improved Efficiency Due to Low Base Drive Requirements:

♦ High and Flat DC Current Gain hFE

♦ Fast Switching

♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)

• Tight Parametric Distributions are Consistent Lot−to−Lot

• Two Package Choices: Standard TO−220 or Isolated TO−220

• MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File

#E69369

• These Devices are Pb−Free and are RoHS Compliant*

MJF18008G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的MJF18008G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。