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MJD45H11T4-A

Complementary power transistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJB45H11T4

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJB45H11T4

ComplementaryPowerTransistors

ComplementaryPowerTransistors D2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepoweramplificationandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,convertersandpoweramplifiers. Features •LowCollector−EmitterSatu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@8.0A •F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉

MJD45H11T4

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@8.0A •F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    MJD45H11T4-A

  • 制造商:

    STMicroelectronics

供应商型号品牌批号封装库存备注价格
STM原厂目录
23+
DPAK
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
国产ON
2017+
TO-252
54899
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
23+
TO-220F
18000
询价
ON
1215+
TO-252
150000
全新原装,绝对正品,公司大量现货供应.
询价
ON
TO-252
2000
正品原装--自家现货-实单可谈
询价
ON
11+
13193
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
ON
06+
TO252
2295
询价
ON
23+
DPAK
7750
全新原装优势
询价
ON
2016+
SOT252
6528
只做进口原装现货!假一赔十!
询价
ON
2016+
SOT252
1000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多MJD45H11T4-A供应商 更新时间2024-5-21 10:50:00