MJE13003A

SWITCHING REGULATOR APPLICATION.

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEEDSWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=1.1μS(Max.),tf=0.7μS(Max.),atIC=1.5A •HighCollectorVoltage:VCBO=700V.

MJE13003A

isc Silicon NPN Power Transistor

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage :VCE(sat)=1.0(Max)@IC=1.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitching ininductivecircuit,theyareparticularlysuitedfor 115an

MJE13003A

NPN Silicon Plastic-Encapsulate Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipatio

MJE13003A-BP

包装：散装 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1.5A TO126

13003

SWITCHINGREGULATORAPPLICATION.

13003

Series810&822EconomyVertisocketw/BifurcatedContacts

FEATURES •High-volumeVerticalDisplayMountingApplications •UsefulforConnectionofBoard-to-BoardJumpersandDIPSwitches,aswellasLEDDevices

13003

powerswitchingapplications

TRANSISTOR(NPN) FEATURES •powerswitchingapplications

13003

HIGHVOLTAGESWITCHINGAPPLICATIONS

13003AD

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003ADA

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION DESCRIPTION TheUTC13003ADAisasiliconNPNpowerswitchingtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighcollector-basebreakdownvoltage,lowreverseleakagecurrentandhighreliability,etc. TheUTC

13003ADG

NPNSILICONPOWERTRANSISTOR

DESCRIPTION Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220Vapplicationsinswitchmode. FEATURES *ReversebiasedSOAwithinductiveload@TC=100°C *Inductiveswitchingmatr

13003B

BipolarJunctionTransistor

FEATURES ●Highvoltagecapability ●Intergratedantiparallelcollector-emitterdiode ●Featuresofgoodhightemperature ●Highswitchingspeed APPLICATION FluorescentLamp、ElectronicBallast、 andSwitch-modepowersupplies

13003BDG

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

13003BR

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:1.25WTamb=25 Collectorcurrent ICM:1.5A Collector-basevoltage V(BR)CBO:700V

13003BR

NPNEPITAXIALPLANARTRANSISTOR

Description TheHMJE13003Tisdesignedforhighvoltage.Highspeedswitching inductivecircuitsandamplifierapplications. Features •HighSpeedSwitching •LowSaturationVoltage •HighReliability

13003BR

NPNEPITAXIALPLANARTRANSISTOR

Description •HighVoltage,HighSpeedPowerSwitch •SwitchRegulators •PWMInvertersandMotorControls •SolenoidandRelayDrivers •DeflectionCircuits

13003BR

TRIPLEDIFFUSEDNPNTRANSISTOR(SWITCHINGREGULATOR,HIGHVOLTAGEANDHIGHSPEEDSWITCHING)

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEED SWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=1.1μS(Max.),tf=0.7μS(Max.),atIC=1A •HighCollectorVoltage:VCBO=700V.

13003BS

NPNSILICONBIPOLARTRANSISTORSFORLOWFREQUENCYAMPLIFICATION

13003CB

WhiteLEDProductsforBusApplications

WhiteLEDProductsforBusApplications

13003CDH

NPNSILICONPOWERTRANSISTOR

DESCRIPTION Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedfor115and220Vapplicationsinswitchmode. FEATURES *ReversebiasedSOAwithinductiveload@TC=100°C *Inductiveswitchingmatr