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MBT3904DW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors TheMBT3904DW1T1,MBT3906DW1T1,andMBT3946DW1T1devicesarespin–offsofourpopularSOT–23/SOT–323three–leadeddevices.TheyaredesignedforgeneralpurposeamplifierapplicationsandarehousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwod

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

MBT3904DW1T1

Dual General Purpose Transistors

TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1G

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1

Dual General Purpose Transistors

ETL

E-Tech Electronics LTD

ETL

MBT3904DW1T1

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1_05

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MBT3904DW1T1H

包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 阵列 描述:TRANS 2NPN 40V 0.2A SC88

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

FMBT3904DW1

DualNPNTransistor

DualGeneralPurposeTransistorNPN+NPNSilicon Features •Highcollector-emitterbreakdienvoltage.(BVCEO=40V@I=1mA) •Smallloadswitchtransistorwithhighgainandlowstaurationvoltage,isdesignedforgeneralpurposeamflifierandswitchingapplicationsatcollectorcurrent. •Offer

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

MBT3904DW1

DualGeneralPurposeTransistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NSVMBT3904DW1

DualGeneralPurposeTransistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SMBT3904DW1

DualGeneralPurposeTransistors

TheMBT3904DW1andMBT3904DW2devicesareaspin−offofourpopularSOT−23/SOT−323three−leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT−363six−leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

详细参数

  • 型号:

    MBT3904DW1T

  • 功能描述:

    两极晶体管 - BJT 200mA 60V Dual NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
2017+
SOT-363SC-88
56787
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON/ONSemiconductor/安森
2008++
SOT-163/SOT-23-6
8327
新进库存/原装
询价
ON
13+
SOT363
300000
特价热销现货库存
询价
ON
2016+
SOT363
6528
只做进口原装现货!假一赔十!
询价
ON
23+
SOT-363
60000
全新原装正品
询价
ON
22+
SOT363
6980
原装现货,可开13%税票
询价
ON
2022+
SOT363
5000
只做原装公司现货
询价
ON
2020+
原厂封装
35000
100%进口原装正品公司现货库存
询价
ETL
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
ONSEMI
2021+
N/A
6800
只有原装正品
询价
更多MBT3904DW1T供应商 更新时间2024-4-26 9:52:00