MAX9530EXV+T资料datasheet下载原装现货第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IMIC9530CY	文件：263.15 Kbytes Page：11 Pages	PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features •Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter •Inputclockfrequencyof25MHzto33.3MHz •OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 •Outputgroupedintwobanksoffiveclockseach •OneREFXINclockoutput •SMBusclockcontrolinterfac	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
IMIC9530CY	文件：154.45 Kbytes Page：10 Pages	PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features •Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter •Inputclockfrequencyof25MHzto33.3MHz •OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 •Outputgroupedintwobanksoffiveclockseach •OneREFXINclockoutput •SMBusclockcontrolinterfac	SILABS Silicon Laboratories	SILABS
IMIC9530CYT	文件：154.45 Kbytes Page：10 Pages	PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features •Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter •Inputclockfrequencyof25MHzto33.3MHz •OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 •Outputgroupedintwobanksoffiveclockseach •OneREFXINclockoutput •SMBusclockcontrolinterfac	SILABS Silicon Laboratories	SILABS
IMIC9530CYT	文件：263.15 Kbytes Page：11 Pages	PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features •Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter •Inputclockfrequencyof25MHzto33.3MHz •OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 •Outputgroupedintwobanksoffiveclockseach •OneREFXINclockoutput •SMBusclockcontrolinterfac	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
IRF9530	文件：378.27 Kbytes Page：6 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung Group 三星三星半导体	Samsung
IRF9530	文件：508.31 Kbytes Page：12 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung Group 三星三星半导体	Samsung
IRF9530	文件：63.6 Kbytes Page：7 Pages	12A,100V,0.300Ohm,P-ChannelPowerMOSFETs 12A,100V,0.300Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRF9530	文件：449.2 Kbytes Page：6 Pages	TRANSISTORS Features: ■P-ChannelVersatility ■CompactPlasticPackage ■FastSwitching ■LowDriveCurrent ■EaseofParalleling ■ExcellentTemperatureStability	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF9530	文件：1.26984 Mbytes Page：3 Pages	P-ChannelMOSFET ■Features ●VDS(V)=-100V ●ID=-13A(VGS=-10V) ●RDS(ON)	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
IRF9530	文件：566.6 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRF9530	文件：158.27 Kbytes Page：8 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRF9530	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
IRF9530	文件：303.03 Kbytes Page：2 Pages	iscP-ChannelMosfetTransistor FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF9530N	文件：2.77627 Mbytes Page：7 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9530N	文件：335.28 Kbytes Page：2 Pages	P-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF9530N	文件：113.13 Kbytes Page：8 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF9530NL	文件：173.15 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF9530NL	文件：273.47 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤200mΩ(@VGS=-10V;ID=-8.4A) •Advancedtrenchprocesstechnology •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Fastswitchingapplication.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF9530NL	文件：1.20027 Mbytes Page：10 Pages	AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF9530NLPBF	文件：758.16 Kbytes Page：10 Pages	AdvancedProcessTechnologySurfaceMount VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
MAX9530EXV+T
功能描述：
视频 IC
RoHS：
否
制造商：
Fairchild Semiconductor
工作电源电压：
5 V
电源电流：
80 mA
最大工作温度：
+ 85 C
封装/箱体：
TSSOP-28
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	MAX9532	MAXIM	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市恒意法电子有限公司	MAX9532AUB/V+	Analog Devices Inc./Maxim Inte	21+	10-TFSOP,10-MSOP(0.118,3.00	5000	正规渠道/品质保证/原装正品现货	询价
深圳市宏捷佳电子科技有限公司	MAX9532AUB/V+	Analog Devices Inc./Maxim Inte	24+	10-TFSOP,10-MSOP(0.118,3.00	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市恒创达实业有限公司	MAX9532AUB/V+T	MAIXM	17+	MSOP10	6200	100%原装正品现货	询价
深圳市鹏和科技有限公司	MAX9532AUB/V+T	MAXIM	24+	MSOP10	5000	只做原装公司现货	询价
深圳市科恒伟业电子有限公司	MAX9532AUB/V+T	MAIXM	2018+	MSOP10	11256	只做进口原装正品!假一赔十!	询价
深圳宇航军工半导体有限公司	MAX9532AUB/V+T	MAXIM	19+	MSOP10	256800	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳中芯器材有限公司	MAX9532AUB/V+T	MAX	12+13+	MSOP10	4990	原装现货	询价
深圳市华斯顿科技有限公司	MAX9532AUB/V+T	MAIXM	22+23+	MSOP10	20879	绝对原装正品全新进口深圳现货	询价
深圳诚思涵科技有限公司	MAX9532AUB/V+T	MAIXM	18+	MSOP10	85600	保证进口原装可开17%增值税发票	询价

更多MAX9530EXV+T供应商更新时间2024-6-18 9:02:00

详细参数

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