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M5M51008DFP	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DFP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DFP-55H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DFP-55H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DFP-70H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DFP-70H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008BFP	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CFP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CKV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CRV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CVP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DKR	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DKV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DRV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DVP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

详细参数

型号：
M5M51008DFP
制造商：
MITSUBISHI
制造商全称：
Mitsubishi Electric Semiconductor
功能描述：
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	M5M51008DFP			SOP	3000	公司存货	询价
深圳好佳好科技有限公司	M5M51008DFP	MIT	1408++	SOP32	20000	绝对原装进口现货可开增值税发票	询价
深圳市永贝尔科技有限公司	M5M51008DFP	MITSUBISHI	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市百视威讯电子科技有限公司	M5M51008DFP		23+	N/A	49200	正品授权货源可靠	询价
贸泽芯城（深圳）电子科技有限公司	M5M51008DFP	RENESAS/瑞萨	22+	SOP32	8000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市毅创腾电子科技有限公司	M5M51008DFP-70H	RENESAS	23+	SOP/32	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市力通伟业半导体有限公司	M5M51008DFP-70HI	MIT	07+	SOP	8	特价热销现货库存100%原装正品欢迎来电订购!	询价
鑫勃源（上海北京青岛）有限公司	M5M51008DFP-55H	MIT	23+	SOP14	18000		询价
深圳市益百分电子有限公司	M5M51008DFP-70H	MIT	SOP32	97+	70	全新原装进口自己库存优势	询价
深圳市卓越微芯电子有限公司	M5M51008DFP-70H	MIT	2020+	SOP32	2609	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多M5M51008DFP供应商更新时间2024-5-15 16:00:00

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