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M5M51008CKV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CKV-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CKV-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CKV-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CKV-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CFP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CRV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008CVP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DFP	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008DFP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DKR	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DKV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DRV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
M5M51008DVP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

详细参数

型号：
M5M51008CKV
制造商：
MITSUBISHI
制造商全称：
Mitsubishi Electric Semiconductor
功能描述：
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	M5M51008CKV	MITSUBISHI	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市佳鑫美电子科技有限公司	M5M51008CKV-70H	MITSUBISHI	22+	TSSOP-32	4650		询价
深圳市卓越微芯电子有限公司	M5M51008CKV-70H	MITSUBI	2020+	QFP	487	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华来深电子有限公司	M5M51008CKV-70H	MITSUBI	23+	QFP	8650	受权代理!全新原装现货特价热卖!	询价
瀚佳科技(深圳)有限公司	M5M51008CKV-55X	MIT	19+		9850	公司原装现货/随时可以发货	询价
深圳市科恒伟业电子有限公司	M5M51008CP-55H	M5L	2016+	DIP	6528	只做原厂原装现货!终端客户个别型号可以免费送样品!	询价
深圳市华睿芯科技有限公司	M5M51008CP-55H	HIT	23+	DIP32	20000	原厂原装正品现货	询价
深圳市维尔达电子有限公司	M5M51008CP-55H	HIT	2023+	DIP32	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市创盛芯科技有限公司	M5M51008CP-55H	M5L	22+	DIP	300	原装现货假一赔十	询价
深圳市汇莱威科技有限公司	M5M51008CP-55H		MIT	DIP32	68900	原包原标签100%进口原装常备现货!	询价

更多M5M51008CKV供应商更新时间2024-6-5 8:02:00

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