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M28F256

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B1TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B3TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B3TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B6TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10B6TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C1TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C3TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C3TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C6TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10C6TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB1TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB3TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB3TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB6TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XB6TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28F256-10XC1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M28F256

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    256K(32K x8, Chip Erase)FLASH MEMORY

供应商型号品牌批号封装库存备注价格
ST
22+
DIP32
3629
原装优势!房间现货!欢迎来电!
询价
ST
22+
PLCC32
16900
正规渠道,只有原装!
询价
ST
PLCC32
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
22+
PLCC32
16900
支持样品 原装现货 提供技术支持!
询价
ST
2015+
DIP
19889
一级代理原装现货,特价热卖!
询价
ST
1116+
PLCC32
6869
绝对原装现货
询价
ST
23+
PLCC
8795
询价
ST
16+
PLCC
1099
原装现货假一罚十
询价
ST
23+
标准封装
18000
询价
ST
散新
10000
自己现货
询价
更多M28F256供应商 更新时间2024-4-30 11:26:00