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M28F256-10XB6TR中文资料PDF规格书
M28F256-10XB6TR规格书详情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100µA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
标准封装 |
18000 |
询价 | |||
ST |
2015+ |
DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ST/STMicroelectronics/意法半导 |
21+ |
DIP-32 |
43 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SGSTHOMSON |
05+ |
原厂原装 |
4272 |
只做全新原装真实现货供应 |
询价 | ||
ST |
DIP-32 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
23+ |
NA/ |
3278 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST/意法 |
21+ |
DIP32 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
ST |
DIP-32 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
STM |
9944 |
9 |
公司优势库存 热卖中! |
询价 | |||
INTERSIL |
16+ |
DIP-28 |
1200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |