M01N65L规格书库存现货华瑞CET-114ic电子网

首页 >M01N65L>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB01N65	文件：429.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED01N65	文件：400.59 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED01N65A	文件：398.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED01N65A	文件：472.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF01N65	文件：429.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEK01N65	文件：1.2255 Mbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.35A,RDS(ON)=10.5Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEK01N65	文件：679.14 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEK01N65A	文件：583.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.3A,RDS(ON)=15W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEK01N65A	文件：375.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.3A,RDS(ON)=15Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP01N65	文件：429.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU01N65	文件：400.59 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU01N65A	文件：398.58 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU01N65A	文件：472.38 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CJB01N65B	文件：345.5 Kbytes Page：2 Pages	TO-263-2LPlastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJD01N65B	文件：750.66 Kbytes Page：3 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJP01N65B	文件：584.29 Kbytes Page：2 Pages	N-ChannelPowerMOSFET	ZPSEMI ZP Semiconductor	ZPSEMI
CJPF01N65B	文件：343.15 Kbytes Page：2 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJU01N65B	文件：695.63 Kbytes Page：3 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJV01N65B	文件：339.15 Kbytes Page：2 Pages	TO-92Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJV01N65B	文件：710.67 Kbytes Page：5 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU

12 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	M01N65L	UBIQ		SOP-8	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市晨豪科技有限公司	M01NK5	MOTOROLA/摩托罗拉	23+	CuDIP-48	89630	当天发货全新原装现货	询价
深圳市特顺芯科技有限公司	M01R56JI	IRC	D/C99		2358		询价
深圳市振宏微科技有限公司	M01SL33KJI	WELWYN	23+	NA	9576	专做原装正品,假一罚百!	询价
深圳市明嘉莱科技有限公司	M01W4	ST/意法	20+	8-TSSOP	880000	明嘉莱只做原装正品现货	询价
深圳兆威电子有限公司	M01X	VB	2019	SOT-23	55000	绝对原装正品假一罚十!	询价
深圳市拓亿芯电子有限公司	M01X	IR	23+	SOT23-3	15000	全新原装现货,价格优势	询价
深圳市九方航科技有限公司	M01X	VBSEMI	19+	SOT-23	29600	绝对原装现货,价格优势!	询价
深圳市力通伟业半导体有限公司	M02	ON	13+	SOT-23	60000	特价热销现货库存	询价
上海金庆电子技术有限公司	M-02	HSISensing	新		18	全新原装货期两周	询价

更多M01N65L供应商更新时间2024-5-3 11:10:00

相关规格书

相关库存