| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
35A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss, | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Integrated Circuits Division | IXYS | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Integrated Circuits Division | IXYS | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Aspecificonresistance(m-cm2)reductionof 25 •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
1100 |
询价 | ||||||
LXH/LVT |
22+ |
SOP14 |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
利信辉 |
21+ |
- |
4500 |
航宇科工半导体-央企合格优秀供方 |
询价 | ||
23+ |
N/A |
98000 |
一级代理放心采购 |
询价 | |||
23+ |
N/A |
98000 |
一级代理放心采购 |
询价 |
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