LP7612P70中文资料PDF规格书
LP7612P70规格书详情
DESCRIPTION AND APPLICATIONS
The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612’s active areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLAN and WLL systems, and other types of high-gain applications for radio link systems.
FEATURES
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz
♦ 7.5 dB Power Gain at 18 GHz
♦ 16 dB Small Signal Gain at 2 GHz
♦ 0.8 dB Noise Figure at 2 GHz
产品属性
- 型号:
LP7612P70
- 制造商:
FILTRONIC
- 制造商全称:
FILTRONIC
- 功能描述:
PACKAGED HIGH DYNAMIC RANGE PHEMT
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
微源 |
21+ |
N/A |
164000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RFMD |
22+ |
P70 |
1500 |
原装现货假一赔十 |
询价 | ||
LP |
20+/21+ |
DIP |
5600 |
特价原装现货 |
询价 | ||
LOWPOWER(微源半导体) |
23+ |
SOP8EP |
6000 |
询价 | |||
RFMD |
2021+ |
P70 |
3000 |
十年专营原装现货,假一赔十 |
询价 | ||
RFMD |
01+ |
P70 |
500 |
原装现货支持BOM配单服务 |
询价 | ||
微源 |
2023+ |
N/A |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
LOWPOWER |
24+25+/26+27+ |
TSOP-8 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
RFMD |
22+ |
P70 |
12800 |
本公司只做进口原装!优势低价出售! |
询价 | ||
微源 |
24+ |
N/A |
18000 |
原装正品 有挂有货 假一赔十 |
询价 |