DESCRIPTION AND APPLICATIONS

The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 750 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in a variety of packages, including SOT89 and P100 packages.

Typical applications include commercial and other types of high-performance power amplifiers, including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.

FEATURES

♦ 28 dBm Output Power at 1-dB Compression at 18 GHz

♦ 10 dB Power Gain at 18 GHz

♦ 24 dBm Output Power at 1-dB Compression at 3.3V

♦ 55 Power-Added Efficiency