Features

 High voltage rail up to 600 V

 dV/dt immunity ± 50 V/nsec in full temperature

range

 Driver current capability:

– 400 mA source

– 650 mA sink

 Switching times 70/40 nsec rise/fall with 1 nF

load

 3.3 V, 5 V, 15 V CMOS/TTL input comparators

with hysteresis and pull-down

 Internal bootstrap diode

 Outputs in phase with inputs

 Deadtime and interlocking function

Description

The L6389E is a high voltage gate driver,

manufactured with the BCD ™ “offline”

technology, and able to drive a half-bridge of

power MOSFET/IGBT devices. The high-side

(floating) section is enabled to work with voltage

rail up to 600 V. Both device outputs can sink and

source 650 mA and 400 mA respectively and

cannot be simultaneously driven high thanks to an

integrated interlocking function. Further

prevention from outputs cross conduction is

guaranteed by the deadtime function.

The L6389E device has two input and two output

pins, and guarantees the outputs switch in phase

with inputs. The logic inputs are CMOS/TTL

compatible (3.3 V, 5 V and 15 V) to ease the

interfacing with controlling devices.

The bootstrap diode is integrated in the driver

allowing a more compact and reliable solution.

The L6389E device features the UVLO protection

on both supply voltages (VCC and VBOOT)

ensuring greater protection against voltage drops

on the supply lines.

The device is available in an SO-8 tube, and tape

and reel packaging options.

Applications

 Home appliances

 Industrial applications and drives

 Motor drivers

– DC, AC, PMDC and PMAC motors

 Induction heating

 HVAC

 Factory automation

 Lighting applications

 Power supply systems

L6389E属于集成电路（IC） > 栅极驱动器。意法半导体（ST）集团制造生产的L6389E栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。