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KSMU3P20

200V P-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

FQB3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF3P20

QFETP-CHANNEL

FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:6.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):2.06Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20

200VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20TF

P-ChannelQFETMOSFET-200V,-0.67A,2.7

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSMD3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD3P20

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-3A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
23+
N/A
30650
正品授权货源可靠
询价
KERSEMI
23+
TO-251
12300
全新原装真实库存含13点增值税票!
询价
KERSEMI/科盛美
TO-251
265209
假一罚十原包原标签常备现货!
询价
KERSEMI
23+
TO-251
10000
公司只做原装正品
询价
KERSEMI/科盛美
23+
TO-251
50000
全新原装正品现货,支持订货
询价
KERSEMI
21+
TO-251
10000
原装现货假一罚十
询价
KERSEMI
TO-251
22+
6000
十年配单,只做原装
询价
KERSEMI
23+
TO-251
6000
原装正品,支持实单
询价
KERSEMI/科盛美
23+
NA/
6063
原装现货,当天可交货,原型号开票
询价
KERSEMI
22+
TO-251
25000
只做原装进口现货,专注配单
询价
更多KSMU3P20供应商 更新时间2024-5-21 11:36:00