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FQB3P20

200V P-Channel MOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF3P20

QFETP-CHANNEL

FEATURES •AdvancedNewDesign •AvalancheRuggedTechnology •RuggedGateOxideTechnology •VeryLowIntrinsicCapacitances •ExcellentSwitchingCharacteristics •UnrivalledGateCharge:6.0nC(Typ.) •ExtendedSafeOperatingArea •LowerRDS(ON):2.06Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20

200VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT3P20TF

P-ChannelQFETMOSFET-200V,-0.67A,2.7

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSMD3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD3P20

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-3A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FQB3P20

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    200V P-Channel MOSFET

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-263
3800
原装库存
询价
FAIRCHILD
2017+
TO-263-2
25899
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
FAIRCHILD
08+(pbfree)
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
23+
N/A
48800
正品授权货源可靠
询价
VB
2019
NA
55000
绝对原装正品假一罚十!
询价
FAIRCHILD/仙童
2022+
650
全新原装 货期两周
询价
FAIRC
2020+
TO-263(D2PAK)
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
VISHAY/威世
23+
TO-220AB
69820
终端可以免费供样,支持BOM配单!
询价
更多FQB3P20供应商 更新时间2024-5-21 16:02:00