首页 >K4E641612C>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | |
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4Mx16bitCMOSDynamicRAMwithExtendedDataOut DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4Mx16bitCMOSDynamicRAMwithExtendedDataOut DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
4Mx16bitCMOSDynamicRAMwithExtendedDataOut DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf | SamsungSamsung Group 三星三星半导体 | Samsung | ||
CMOSDRAM 4Mx16bitCMOSDynamicRAMwithExtendedDataOut | SamsungSamsung Group 三星三星半导体 | Samsung |
详细参数
- 型号：
K4E641612C
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
4M x 16bit CMOS Dynamic RAM with Extended Data Out
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
15+ |
11560 |
全新原装,现货库存,长期供应 |
询价 | |||
SAMSUNG |
TSOP50 |
0202+ |
667 |
全新原装进口自己库存优势 |
询价 | ||
SAM |
00+ |
BGA |
1971 |
询价 | |||
SAMSUNG |
2022 |
TSOP |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
SAMSUNG |
22+ |
TSOP |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
SAM |
23+ |
BGA |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
SAM |
23+ |
BGA |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAMSUNG |
2017+ |
TSOP50 |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
询价 | ||
SAMSUNG |
17+ |
TSOP50 |
9988 |
只做原装进口,自己库存 |
询价 |
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