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K4E641612B中文资料PDF规格书
K4E641612B规格书详情
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
产品属性
- 型号:
K4E641612B
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
4M x 16bit CMOS Dynamic RAM with Extended Data Out
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
SAMSUNG/三星 |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 | ||
SAMSUNG/三星 |
2023+ |
BGA |
1970 |
专注全新正品,优势现货供应 |
询价 | ||
SAMSUNG |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
SAMSUNG/三星 |
1824+ |
TSOP |
3230 |
原装现货专业代理,可以代拷程序 |
询价 | ||
SAMSUNG |
23+ |
BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
SAM |
00+ |
BGA |
1971 |
询价 | |||
SAMSUNG |
24+ |
BGA |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 |