2N5886

POWERTRANSISTORS(25A,200W)

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

2N5886

COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS

DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION

2N5886

PowerTransistors

PowerTransistors

2N5886

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

2N5886

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 ·Highpowerdissipations APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications

2N5886

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications

2N5886

iscSiliconNPNPowerTransistors

DESCRIPTION ·DCCurrentGain- :hFE=20(Min)@IC=10A ·LowSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=15A ·ComplementtoType2N5883/5884 APPLICATIONS ·Designedforgeneralpurposepoweramplifierandswitchingapplications.

2N5886

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

2N5886

BipolarNPNDeviceinaHermeticallysealedTO3

2N5886

POWERTRANSISTORSCOMPLEMENTARYSILICON

...designedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent-ICEX=1.0mAdc(Max) •ExcellentDCCurrentGain−hFE=20(Min)@IC=10Adc

2N5886

SiliconNPNPowerTransistors

2N5886G

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell