首页 >IXGR50N60B>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,50AShortCircuitRatedIGBT GeneralDescription Fairchild®’sRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitching lossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol, uninterruptedpowersupplies(UPS)andgenerali | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription Fairchild®’sRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitching lossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol, uninterruptedpowersupplies(UPS)andgenerali | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,50AShortCircuitRatedIGBT GeneralDescription Fairchild®’sRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitching lossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol, uninterruptedpowersupplies(UPS)andgenerali | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
产品属性
- 产品编号:
IXGR50N60B
- 制造商:
IXYS
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 系列:
HiPerFAST™
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.5V @ 15V,50A
- 开关能量:
3mJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
50ns/110ns
- 测试条件:
480V,50A,2.7 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
ISOPLUS247™
- 描述:
IGBT 600V 75A 250W ISOPLUS247
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
23+ |
ISOPLUS247 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
16+ |
TO-247 |
2100 |
公司大量全新现货 随时可以发货 |
询价 | ||
IXYS |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
ISOPLUS247? |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
22+ |
ISOPLUS247 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
6000 |
原装正品,支持实单 |
询价 | ||
IXYS |
2022+ |
ISOPLUS247? |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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