首页 >IXFK64N60P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFK64N60P | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High | IXYS IXYS Integrated Circuits Division | IXYS | |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advantages ●EasytoMount ●SpaceSavings Applications ●DC-DCCon | IXYS IXYS Integrated Circuits Division | IXYS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=100mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedp | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHVHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=96mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVTMHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXFK64N60P
- 功能描述：
MOSFET 600V 64A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-264AA(IXFK) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-264JD |
52388 |
原装正品 华强现货 |
询价 | ||
Littelfuse/IXYS |
23+ |
TO-264-3 |
7810 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
23+ |
管3PL表 |
18000 |
询价 | |||
IXYS |
08+(pbfree) |
TO-264 |
8866 |
询价 | |||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
询价 | ||
IXYS |
1746+ |
TO264 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
IXYS |
23+ |
TO-264 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
18+ |
TO-3PL |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
IXYS |
23+ |
TO-3PL |
264 |
询价 |
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