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IXFK44N60

HiPerFET Power MOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFK44N60

HiPerFET Power MOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFK44N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFE44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastin

IXYS

IXYS Integrated Circuits Division

IXFL44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Integrated Circuits Division

IXFN44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwit

IXYS

IXYS Integrated Circuits Division

IXFR44N60

HiPerFETTMPowerMOSFETsISOPLUS247

IXYS

IXYS Integrated Circuits Division

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFX44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MS44N60T

LowrDS(on)trenchtechnology

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

详细参数

  • 型号:

    IXFK44N60

  • 功能描述:

    MOSFET DIODE Id44 BVdass600

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
07+/08+
TO-264AA
265
询价
IXYS
23+
管3PL
18000
询价
IXY
05+
TO-3PL
500
原装进口
询价
IXYS
1034+
TO264
24
全新现货!低价支持实单!!一片起订
询价
IXYS
23+
管3PL
5000
原装正品,假一罚十
询价
IXYS
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
1802+
TO264
6528
只做原装正品现货,或订货假一赔十!
询价
IXYS
19+
TO-264-3
56800
TO-264AA
询价
23+
N/A
59810
正品授权货源可靠
询价
更多IXFK44N60供应商 更新时间2024-5-21 10:02:00