| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFA3N80 | HiPerFET Power MOSFETs Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFA3N80 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
2.5Amps,800VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC3N80provideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=3.8Ω@VGS=10V *UltraLowGateCharge(typical19nC) *LowReverseTransfer | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
3Amps,800VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
3Amps,800VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
3.0A竊?00VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
3Amps,800VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC3N80ZprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
800V,2.8AN-ChannelMOSFET GeneralDescription TheAOD3N80hasbeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularACDCapplications. ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartcan | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-CHANNELMOSFETinaTO-252PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-220FLPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
800VN-ChannelMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
800VN-ChannelMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
800VN-ChannelMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER |
详细参数
- 型号：
IXFA3N80
- 功能描述：
MOSFET 3.6 Amps 800V 3.6 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-263AA |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS/艾赛斯 |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
询价 | ||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
23+ |
TO-263-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
2019+ |
TO-263-3 |
65500 |
D2Pak(2Leads+Tab) |
询价 | ||
IXYS |
20+ |
TO-263-3 |
90000 |
全新原装正品/库存充足 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-263 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 |
相关规格书
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