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ISD9160FI TR

包装:托盘 封装/外壳:48-LQFP 类别:集成电路(IC) 应用特定微控制器 描述:IC SOC CHIPCORDER 48LQFP

NuvotonNuvoton Technology Corporation

新唐新唐科技股份有限公司

9160

SimplePCIBridging

OXFORD

OXFORD electrical power

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通电缆设计科技有限公司

9160

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

9160F

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

ACTF9160

RFFilter

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

BD9160FVM

1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA Electronics, Inc.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

产品属性

  • 产品编号:

    ISD9160FI TR

  • 制造商:

    Nuvoton Technology Corporation

  • 类别:

    集成电路(IC) > 应用特定微控制器

  • 包装:

    托盘

  • 应用:

    录音/回放

  • 核心处理器:

    ARM® Cortex®-M0

  • 程序存储器类型:

    FLASH(145kB)

  • RAM 大小:

    12K x 8

  • 接口:

    I²C,IrDA,LIN,SPI,UART/USART

  • 电压 - 供电:

    2.5V ~ 5.5V

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-LQFP

  • 供应商器件封装:

    48-LQFP(7x7)

  • 描述:

    IC SOC CHIPCORDER 48LQFP

供应商型号品牌批号封装库存备注价格
NUVOTON
23+
NA
8021
专业电子元器件供应链正迈科技特价代理QQ1304306553
询价
NUVOTON
2018+
QFP
6000
全新原装正品现货,假一赔佰
询价
NUVOTON
2021+
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NUVOTON/新唐
QFP
265209
假一罚十原包原标签常备现货!
询价
NUVOTON/新唐
23+
QFP
50000
全新原装正品现货,支持订货
询价
NUVOTON
21+
QFP
10000
原装现货假一罚十
询价
NUVOTON/新唐
22+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
NUVOTON/新唐
23+
NA/
3500
原装现货,当天可交货,原型号开票
询价
NUVOTON/新唐
20+PB
QFP
2882
20+PB
询价
ISD
2019+PB
LQFP-48
18633
就找我吧!--邀您体验愉快问购元件!
询价
更多ISD9160FI TR供应商 更新时间2024-6-8 9:11:00