首页 >ISD9160FI TR>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
ISD9160FI TR | 包装:托盘 封装/外壳:48-LQFP 类别:集成电路(IC) 应用特定微控制器 描述:IC SOC CHIPCORDER 48LQFP | NuvotonNuvoton Technology Corporation 新唐新唐科技股份有限公司 | Nuvoton | |
SimplePCIBridging | OXFORD OXFORD electrical power | OXFORD | ||
Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
RFFilter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA Electronics, Inc. | PCA | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
产品属性
- 产品编号:
ISD9160FI TR
- 制造商:
Nuvoton Technology Corporation
- 类别:
集成电路(IC) > 应用特定微控制器
- 包装:
托盘
- 应用:
录音/回放
- 核心处理器:
ARM® Cortex®-M0
- 程序存储器类型:
FLASH(145kB)
- RAM 大小:
12K x 8
- 接口:
I²C,IrDA,LIN,SPI,UART/USART
- 电压 - 供电:
2.5V ~ 5.5V
- 工作温度:
-40°C ~ 85°C
- 安装类型:
表面贴装型
- 封装/外壳:
48-LQFP
- 供应商器件封装:
48-LQFP(7x7)
- 描述:
IC SOC CHIPCORDER 48LQFP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NUVOTON |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
NUVOTON |
2018+ |
QFP |
6000 |
全新原装正品现货,假一赔佰 |
询价 | ||
NUVOTON |
2021+ |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NUVOTON/新唐 |
QFP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
NUVOTON/新唐 |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NUVOTON |
21+ |
QFP |
10000 |
原装现货假一罚十 |
询价 | ||
NUVOTON/新唐 |
22+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
NUVOTON/新唐 |
23+ |
NA/ |
3500 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NUVOTON/新唐 |
20+PB |
QFP |
2882 |
20+PB |
询价 | ||
ISD |
2019+PB |
LQFP-48 |
18633 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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