零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FSYC9160D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SimplePCIBridging | OXFORD OXFORD electrical power | OXFORD | ||
Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
RFFilter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA Electronics, Inc. | PCA | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号:
FSYC9160D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
询价 | ||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
INTERSIL |
24+ |
10 |
全新原装 |
询价 | |||
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
询价 | ||
INTERSIL |
2015+ |
99 |
原装正品 |
询价 | |||
INTERSIL |
18+ |
原厂原装假一赔十 |
99 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
询价 | ||
FABRIMEX |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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