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FSYC9160D

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160D1

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160D3

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

9160

SimplePCIBridging

OXFORD

OXFORD electrical power

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通电缆设计科技有限公司

9160

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

9160F

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

ACTF9160

RFFilter

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

BD9160FVM

1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA Electronics, Inc.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FSYC9160D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
INTERSIL
14+
原厂封装
9
宇航IC只做原装假一罚十
询价
INTERSIL
24+
N/A
90000
一级代理商进口原装现货、价格合理
询价
INTERSIL
24+
10
全新原装
询价
TI
N/A
N/A
100
军工品,原装正品
询价
INTERSIL
2015+
99
原装正品
询价
INTERSIL
18+
原厂原装假一赔十
99
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔
询价
FABRIMEX
24+25+/26+27+
车规-电源模块
3280
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多FSYC9160D供应商 更新时间2024-6-9 16:00:00