首页 >IRS21814STRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRS21814STRPBF | HIGH AND LOW SIDE DRIVER Description TheIRS2181/IRS21814arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthigh-sideandlow-sidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thelogicinputiscompatiblewithstan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
IRS21814STRPBF | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：14-SOIC（0.154"，3.90mm 宽） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SOIC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
HIGH-ANDLOW-SIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Floatingchanneldesignedforbootstrapoperation | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGH-ANDLOW-SIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO14 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO-14 Features -FloatingHigh-SideDriverinBootstrapOperationto600V -DrivesTwoN-ChannelMOSFETsorIGBTsinaHalfBridgeConfiguration -1.9ASource/2.3ASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients -WideLow-SideGateDriverandLogicSupply:10Vto20V - | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号：
IRS21814STRPBF
- 制造商：
Infineon Technologies
- 类别：
集成电路（IC） > 栅极驱动器
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 驱动配置：
半桥
- 通道类型：
独立式
- 栅极类型：
IGBT，N 沟道 MOSFET
- 电压 - 供电：
10V ~ 20V
- 逻辑电压 - VIL，VIH：
0.8V，2.5V
- 电流 - 峰值输出（灌入，拉出）：
1.9A，2.3A
- 输入类型：
非反相
- 上升/下降时间（典型值）：
40ns，20ns
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
14-SOIC（0.154"，3.90mm 宽）
- 供应商器件封装：
14-SOIC
- 描述：
IC GATE DRVR HALF-BRIDGE 14SOIC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
SOP-14 |
21+ |
5000 |
中赛美只做原装没有任何中间商差价 |
询价 | ||
原装 |
24+ |
标准 |
48041 |
热卖原装进口 |
询价 | ||
INFINEON |
23+ |
SOP14 |
28811 |
进口原装公司现货,假一罚十,价格优惠 |
询价 | ||
InternationalRectifier |
1818+ |
14-SOICN |
11846 |
询价 | |||
IR |
2021+ |
SOP14 |
8903 |
诚信经营..品质保证..价格优势 |
询价 | ||
Infineon/英飞凌 |
2021+ |
9450 |
原装现货。 |
询价 | |||
INFINEON |
22+ |
SOP-14 |
10000 |
原装正品!!!优势库存!0755-83210901 |
询价 | ||
INFINEON |
21+ |
SOP14 |
1516 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon英飞凌专营 |
SOP14 |
11641 |
原装现货当天可交货,长期备货支持BOM配单账期 |
询价 |
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